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HL: Fachverband Halbleiterphysik

HL 63: Poster: Quantum Dots and Optics

HL 63.76: Poster

Mittwoch, 22. März 2017, 15:00–19:00, P1A

Impact of rotational twin boundaries of GaP/Si(111) substrates on III-V nanowire growth — •Matthias Steidl¹, Christian Koppka¹, Lars Winterfeld², Katharina Peh¹, Peter Kleinschmidt¹, and Thomas Hannappel¹ — ¹Photovoltaics Group, Institute of Physics, Technische Universität Ilmenau, 98693 Ilmenau, Germany — ²Theoretical Physics I, Institute of Physics, Technische Universität Ilmenau, 98693 Ilmenau, Germany

The epitaxial integration of III-V nanowires (NWs) with silicon has attracted considerable interest as one of the most promising ways of combining the tuneable, high-performance properties of III-V materials with the well-established Si technology. The Au-mediated vapor-liquid-solid (VLS) growth represents a common, powerful technique for the fabrication of III-V NWs. As direct growth of NWs on Si(111) entails several difficulties, a widespread approach is to grow a III-V-transition layer prior to NW growth. However, this is generally accompanied by the formation of rotational twins. In the present study we thoroughly investigate the impact of rotational twin boundaries (RTBs) in GaP/Si on the NW growth both for GaP and GaAs NWs. RTBs can either suppress NW growth at all or lead to different undesired growth directions, such as horizontal and diagonal growth. It was found that homoepitaxial NW growth (GaP) and hetereoepitaxial NW growth (GaAs) differs in many aspects. To explain these experimental findings, we developed a model based on classical nucleation theory.