Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 63: Poster: Quantum Dots and Optics
HL 63.77: Poster
Mittwoch, 22. März 2017, 15:00–19:00, P1A
Growth and characteristics of lateral In1−xGaxAs nanowires on silicon substrates — •Thorsten Wierzkowski1,2, Martin Mikulics1,2, Hilde Hardtdegen1,2, and Detlev Grützmacher1,2 — 1Peter Grünberg-Institut 9, Forschungszentrum Jülich, 52425 Jülich, Germany — 2JARA - Fundamentals of Future Information Technology
The integration of low direct band gap and high electron mobility III/V-nanostructures, such as In1−xGaxAs nanowires, into conventional silicon circuits is a promising approach to overcome limits in future Si-CMOS technology. Our approach is to realize In1−xGaxAs nanowire structures horizontally on Si (110) and Si (100) substrates by using low pressure selective area (SA) MOVPE instead of the employment of gold to induce growth since it is detrimental for silicon technology. Another advantage over the catalyst-induced growth method is the position-controlled deposition, which simplifies further processing. Conventionally, In1−xGaxAs nanowires grown vertically in [111] direction exhibit stacking faults in growth direction i.e. the current direction of the future device, which can be detrimental to the carrier mobility. By growing the nanostructures laterally on the Si (110) and Si (100) surface the direction of the stacking faults may have less influence on electron mobility. In this contribution, we will present the effect of trench orientation on lateral nanowire growth on Si (110) substrates and a growth study of lateral nanowires with different In1−xGaxAs compounds on technological important Si (100) substrates.