Dresden 2017 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 64: Poster: Photovoltaics and Optics
HL 64.1: Poster
Wednesday, March 22, 2017, 15:00–19:00, P1C
Chemical and electronic properties of Pt/In2O3 interfaces — •Jonas Michel1, Theresa Berthold1, Stefan Krischok1, Marcel Himmerlich1, Julius Rombach2, Oliver Bierwagen2, Holger von Wenckstern3, and Marius Grundmann3 — 1Institut für Physik & Institut für Mikro- und Nanotechnologien MacroNano, Technische Universität Ilmenau, Germany — 2Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany — 3Universität Leipzig, Institut für Experimentelle Physik II, Leipzig, Germany
Indium oxide (In2O3), a transparent semiconduting oxide, is known to exhibit tunable electron transport characteristics, from semi-insulating to highly n-doped characteristics [1]. One important property of In2O3 is the existence of a surface electron accumulation layer which allows generation of ohmic contacts for devices, but hinders production of rectifying contacts. Recently it has been shown that sputtering from metal targets in a reactive oxygen atmosphere allows formation of Schottky contacts [2]. We have studied metallic Pt contacts deposited by different thin film methods as well as the influence of an In2O3 surface pretreatment by oxygen plasma in order to determine the relevant changes that influence the electron transport characteristics of the Pt/In2O3 interface and to identify the origin of Schottky barrier formation. For this purpose, photoelectron spectroscopy was applied to characterize the chemical composition of the semiconductor surface and the metal contacts as well as to determine the electronic barriers at the heterointerface. [1] O. Bierwagen, Semicond. Sci. Technol. 30 (2015), 024001; [2] H. v. Wenckstern et al., APL Mater. 2 (2014), 046104.