Dresden 2017 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 64: Poster: Photovoltaics and Optics

HL 64.31: Poster

Mittwoch, 22. März 2017, 15:00–19:00, P1C

Open circuit voltage (VOC) in GaAs based quantum well solar cell by using III-V semiconducting materials: A Numerical Simulation Study — •Bhaskar Singh and Daniel Schaadt — Institute for Energy Research and Physical Technologies, Technische Universität Clausthal, Germany

The Sun provides an infinite source of green energy in the form of sun-light which can be directly converted into electricity. GaAs is a direct band-gap (Eg=1.42 eV) semiconducting material which is a very promising material for solar cell fabrication in space applications. To increase the current generation in pn homojunction devices, introducing quantum wells in the intrinsic region is an alternate concept while it allows for easy fabrication and reduces problems with lattice and current matching comparing to stacked solar cells but it triggers a significant reduction in open circuit voltage. InGaAs/GaAs based quantum well solar cell shows this kind of effect in the I-V characteristics.1 To elevate this problem, we introduce here AlGaAs in place of GaAs barrier layers in the intrinsic region. Numerical device simulations show a significant enhancement in the open circuit voltage of quantum well solar cell device.

Reference: 1X.H. Li, P.C. Li, D.Z. Hu, D.M. Schaadt and E.T. Yu, J. Appl. Phys. 115, 044303 (2014)