Dresden 2017 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 64: Poster: Photovoltaics and Optics
HL 64.33: Poster
Wednesday, March 22, 2017, 15:00–19:00, P1C
Structural and electronic characterization of crystalline silicon-aluminum oxide interfaces — •Hannah Stolzenburg, Arne Ahrens, and Michael Seibt — IV. Physikalisches Institut, Georg-August-Universität Göttingen, Germany
Aluminum oxide deposited on crystalline silicon is known for its high surface passivation capabilities. This surface passivation is attributed to a high negative fixed charge density of about −4×1012 cm−2 [1] in the aluminum oxide layer close to the silicon-aluminum oxide interface. This makes aluminum oxide an interesting material to increase the efficiency of solar cells by passivation of surface states. Examples of applications are passivated emitter and rear cells (PERC) [2] and rear-emitter inversion layer solar cell [3], for which efficiencies of 20 % [2] and 18,1 % [3] have been reported, respectively.
In this work, we investigate aluminum oxide layers deposited by atomic layer deposition (ALD) for different processing conditions parameters, as e.g. post-deposition heat treatments, layer thickness, and the effect of UV irradiation. Transmission electron microscopy (TEM) imaging combined with electron energy loss spectroscopy (EELS) is used to study the structure and chemistry of the interface between crystalline silicon and aluminum oxide. Electronic characterization of surface states and oxide charges is done using deep-level-transient-spectroscopy (DLTS) and capacitance-voltage measurements.
[1] F.Werner and J. Schmidt Appl. Phys. Lett. Vol.104, 091604 (2014). [2] J. Schmidt et al., Prog. Photovol: Res. Appl. Vol. 16 461-466 (2008). [3] F. Werner et al., J. Appl. Phy. Vol. 115, 073702 (2014).