Dresden 2017 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 64: Poster: Photovoltaics and Optics

HL 64.36: Poster

Wednesday, March 22, 2017, 15:00–19:00, P1C

Analysis and preparation of In₂S₃:V intermediate band solar cells — •Tanja Jawinski^1,2, Leonard Wägele¹, Holger von Wenckstern², Marius Grundmann², and Roland Scheer¹ — ¹Martin-Luther-University Halle-Wittenberg, Institute of Physics, 06120 Halle, Germany — ²Universität Leipzig, Institut für Experimentelle Physik II, Leipzig, Germany

The maximum efficiency of a standard single junction solar cell is given by the Shockley Queisser limit of around 33%. To overcome this limit an intermediate band, which allows the absorption of photons with energies lower than the band gap E_g can be introduced. In addition, thermalization losses can be reduced since within intermediate band solar cells materials with higher E_g than that of conventional cells are used. According to theoretical calculations In₂S₃ doped with vanadium is a promising candidate for such intermediate band devices.

We grew intrinsic In₂S₃:V on n-TCOs ZnO:Al and SnO:F by physical co-evaporation of the elements. In₂S₃:V p-i-n solar cells are formed with ZnCo₂O₄ and NiO which are prepared by pulsed laser deposition. Current-voltage measurements in the dark reveal rectification of up to 4 orders of magnitude. Measurements under illumination as well as external quantum efficiency measurements provide a proof of principle, even though the short circuit current and the open circuit voltage need to be improved by optimizing the deposition parameters. For deeper understanding we compare solar cells with varying V-concentrations.