Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 64: Poster: Photovoltaics and Optics

HL 64.42: Poster

Mittwoch, 22. März 2017, 15:00–19:00, P1C

Passively mode-locked quantum dot laser emitting at 1250 nm operated in a low temperature environment — •Sebastian Stutz, Christoph Weber, and Stefan Breuer Breuer — Institute of Applied Physics, Technische Universität Darmstadt, Schlossgartenstr. 7, 64289 Darmstadt, Germany

The pulse train stability and mode-locking (ML) properties of passively mode-locked InAs/InGaAs quantum dot semiconductor laser are studied experimentally. The laser consists of a multi-section cavity with a total cavity length of 8 mm and a 0.9 mm long absorber section length. Initial experimental investigations of a mode-locked GaAs quantum well laser at cryogenic temperatures have been performed by M. H. Kiang et al., Electron. Lett. 3, 880 in 1995 with a focus on radio-frequency linewidth study. Here, we expand these investigations towards a comprehensive study of the mode-locking dynamics under various operating temperatures. We then discuss the experimentally obtained dependencies of mode-locked pulse train stability and emission properties in the radio-frequency and spectral domain on laser biasing conditions and temperature down to -98 ^∘C. The results suggest future perspectives on investigating the mode-locking at low temperatures.