Dresden 2017 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 67: Perovskites, Hybrid Photovoltaics and Plasmonics
HL 67.4: Talk
Thursday, March 23, 2017, 10:30–10:45, POT 81
Investigation of Surface Plasmons on β-Sn Segregations of GeSn-Nanostructures — •Felix Reichmann1,2, Viktoria Schlykow1, Subhajit Guha1, Peter Zaumseil1, David Stolarek1, and Thomas Schröder1,2 — 1IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — 2BTU Cottbus-Senftenberg, Konrad-Zuse Straße 1, 03046 Cottbus, Germany
GeSn is a promising candidate for future optoelectronic applications compatible with the current Si based technology. The band gap is tuneable by varying the Sn content in the GeSn alloy. However, the lattice/thermal mismatch of Ge/ α-Sn and Ge/Si leads to defects and the low solubility of Sn in Ge leads to β-Sn segregations during growth and post growth process. High quality growth of GeSn on Si for future high performance devices can be achieved by nanoheteroepitaxy. Furthermore, β-Sn segregations could support surface plasmons (SP) and then be used as antennas for the GeSn nanostructures. SPs on β-Sn are expected for excitation energies in the visible range, in particular for an energy of 2 eV. The dielectric function of β-Sn then fulfils the condition for SPs at a metal-dieletric interface. For very small β-Sn structures, localized SPs should lead to an extraordinary absorbance/scattering of light compared to their size. When cooling down the β-Sn below 13 °C it transforms to α-Sn, resulting in a change of the dielectric function, not supporting the SPs anymore. The goal of our study is to evaluate the SP activity of β-Sn to enhance light emission in GeSn nanostructures for photodetection enhancement.