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HL: Fachverband Halbleiterphysik

HL 69: Quantum Dots: Transport Properties I

HL 69.3: Vortrag

Donnerstag, 23. März 2017, 10:00–10:15, POT 151

Development of a new device for CV spectroscopy of InAs quantum dots under internal illumination — •Pia Eickelmann^1,2, Sven Scholz¹, Andreas D. Wieck¹, and Arne Ludwig¹ — ¹Chair for Applied Solid State Physics, Ruhr-Universität Bochum, Universitätsstraße 150, D-44780 Bochum — ²leaving to Faculty of Physics and CENIDE, University of Duisburg-Essen, Lotharstraße 1, D-47057 Duisburg

Semiconductor quantum dots are one of the most interesting candidates for the realization of quantum information and communication. Therefore, these materials are investigated by several methods, for example by capacitance-voltage (CV) spectroscopy. The spectra for the conduction band states of InAs quantum dots under illumination by an external LED show additional charging peaks which are assigned to the charging of excitonic states in the quantum dots. [1]

In this talk we present a new device, on which CV spectroscopy can be measured under internal excitation of excitons in InAs quantum dots. In detail a quantum dot LED (QLED) containing five quantum dot layers of similar properties is epitaxially grown on a p-i-n-diode with embedded quantum dots. The CV structure and QLED can be contacted separately. Thus, it is possible to excite optically excitons in the CV-structure, using the QLED within the device. Hence, a purely electrical writing and reading out of the quantum state is possible. In the long term, this could be developed into a quantum memory by slight changes in the sample structure and the experimental setup.

[1] P. A. Labud et al., PRL 112, 046803 (2014)