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HL: Fachverband Halbleiterphysik

HL 69: Quantum Dots: Transport Properties I

HL 69.8: Vortrag

Donnerstag, 23. März 2017, 11:45–12:00, POT 151

Low dimensional transport phenomena in modulation-doped GaAs-based core-multishell nanowire field-effect transistors — •Jonathan Becker¹, Dominik M. Irber^1,2, Nari Jeon², Jakob Seidl¹, Damon J. Carrad¹, Stephanie Morkötter¹, Bernhard Loitsch¹, Sonja Matich¹, Markus Döblinger³, Gerhard Abstreiter¹, Jonathan J. Finley¹, Lincoln J. Lauhon², Matthew Grayson⁴, and Gregor Koblmüller¹ — ¹Walter Schottky Institut, Garching, 85748, Germany — ²Dept. of Materials Science & Engineering, Northwestern Univ., Evanston, Il 60208, U.S.A. — ³Dept. of Chemistry, LMU München, Munich 81377, Germany — ⁴Dept. of Electrical Eng. & Computer Sci., Northwestern Univ., Evanston, Il 60208, U.S.A.

In this work we present evidence of 1D quantization in the electronic subband-structure of novel δ-doped GaAs/AlAs core-multishell Ω-gated NWFET devices at low-temperature. The device is adapted from our previous studies of Si-δ-doped GaAs-AlGaAs core-shell NWFETs, which exhibit sharp switching characteristics (SS of 70 mV/dec at 300K) and low-temperature electron mobilities of ≈5000 cm²/Vs of the 2DEG channel confined at the core-shell interface. We find a series of clear conductance steps of distinct subbands in the diffusive regime. Self-consistent Schrödinger-Poisson calculations of the electronic structure reveal a series of quantized degenerate and non-degenerate subbands in good agreement with the experimentally observed degeneracies and level spacings.