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HL: Fachverband Halbleiterphysik

HL 69: Quantum Dots: Transport Properties I

HL 69.9: Vortrag

Donnerstag, 23. März 2017, 12:00–12:15, POT 151

Heavy-hole states in Ge hut wires — •Hannes Watzinger¹, Christoph Kloeffel², Lada Vukušić¹, Marta Rossell^3,4, Violetta Sessi⁵, Josip Kukučka¹, Raimund Kirchschlager¹, Elisabeth Lausecker¹, Alisha Truhlar¹, Martin Glaser⁶, Friedrich Schäffler⁶, Armando Rastelli⁶, Andreas Fuhrer⁴, Daniel Loss², and Georgios Katsaros¹ — ¹IST Austria, 3400 Klosterneuburg, Austria — ²University of Basel, 4056 Basel, Switzerland — ³Empa, 8600 Dübendorf, Switzerland — ⁴IBM Research Zürich, 8803 Rüschlikon, Switzerland — ⁵TU Dresden, 01062 Dresden, Germany — ⁶JKU, 4040 Linz, Austria

Holes confined in group IV quantum dots are promising candidates for the realization of spin qubits. In our group we study holes which are confined in SiGe self-assembled nanostructures [1]. Here we focus on transport measurements through so called Ge hut wires [2]. The g-factors, obtained from magnetic field spectroscopy, show a high in-plane and out-of-plane anisotropy of up to 18, which depends on the number of holes confined in the quantum dot. Numerical simulations are in very good agreement with our experimental findings and reveal a heavy-hole character of the low energy states [3]; such is important for achieving long dephasing times. This work is supported by the EC FP7 ICT project no. 323841, the ERC Starting Grant no. 335497 and the FWF-I-1190-N20 project.

[1] Katsaros, G. et al., Nature Nano. 5, 458-464 (2010); [2] Zhang, J. J. et al. PRL 109, 085502 (2012); Watzinger, H. et al. APL Mater. 2, 076102 (2014) [3] Watzinger, H. et al. Nanolett. 16, 6879-6885 (2016)