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HL: Fachverband Halbleiterphysik
HL 7: Spintronics I (joined session with TT)
HL 7.1: Vortrag
Montag, 20. März 2017, 09:30–09:45, POT 151
Dynamical spin-orbit-based spin transistor — •Fahriye Nur Gürsoy1,2, Phillipp Reck1, Cosimo Gorini1, Klaus Richter1, and Inanç Adagideli2 — 1Institut für Theoretische Physik, Universität Regensburg, D-93040 Regensburg, Germany — 2Faculty of Engineering and Natural Sciences, Sabanci University, Orhanli-Tuzla, Istanbul, Turkey
Spin-based devices are highly important for the future of information technology. In this project we focus on a mesoscopic 2-Dimensional Electron Gas (2DEG) with time-dependent Rashba spin-orbit interaction, which can be engineered via an AC top gate.
Spin-orbit coupling in 2DEGs can be rewritten in terms of appropriate SU(2) gauge fields, so as to clearly identify the relevant Onsager symmetries [1, 2].The latter can then be exploited for the realisation of spin transistor devices, in particular when the spin-orbit interaction is non-homogeneous through the sample [1]. On the other hand, a dynamical Rashba interaction was suggested as a generator of spin-motive forces. Here we merge the two concepts, and explore the possibilities of realising a spin transistor in a quantum coherent sample driven by a time-dependent Rashba field. We follow a mixed analytical-numerical approach, and compute the (spin) conductance and the pumping (spin) current of the periodically driven system with the Floquet Hamiltonian method [3].
[1] I. Adagideli, et al., Phys. Rev. Lett. 108, 236601 (2012).
[2] C. Gorini, et al., Phys. Rev. Lett. 109, 246604 (2012).
[3] J. H. Shirley, Phys. Rev. 138, B979 (1965).