Dresden 2017 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 72: Nitrides: Devices
HL 72.1: Talk
Thursday, March 23, 2017, 09:30–09:45, POT 06
Fabrication and characterization of hybrid n-GaN/p-PEDOT structures for optoelectronic applications — •Linus Krieg1, Priya Moni2, Karen Gleason2, and Tobias Voss1 — 1Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology, Braunschweig University of Technology, 38092 Braunschweig — 2Department of Chemical Engineering, Massachusetts Institute of Technology, 02139 Cambridge, USA
Hybrid structures consisting of an inorganic and organic layer are promising for the development of cheap, versatile and tailored electronic and optoelectronic devices. The structures are supposed to combine the advantages of inorganic and organic components such as a high structural stability whilst maintaining a high flexibility. One method to conformally deposit polymer layers even on both, planar and 3D-structured substrates, is the oxidative chemical vapor deposition (oCVD). The oCVD process is dry and solventless as the polymer is deposited from the gas phase. Therefore, etching of fragile surfaces can be minimized. On the way towards a hybrid GaN/PEDOT LED, the oCVD of PEDOT on n-type GaN substrates is studied. In particular, the effect of different substrate temperatures on the resulting hybrid layer structures is investigated. The IV-characteristics of the hybrid p-n-junctions are analyzed and compared to that of structures containing an additional insulating tunnel barrier of poly(divinylbenzene) (pDVB) between the GaN and PEDOT. First results show pronounced diode characteristics of the hybrid devices and allow us to determine the relevant conduction mechanism at the inorganic/organic interface.