HL 74: Group IV: Si/Ge/SiC
Donnerstag, 23. März 2017, 12:00–13:15, POT 06
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12:00 |
HL 74.1 |
The silicon path to a new kilogram: Impact of the isotopic composition of Si determined by high resolution mass spectrometry — •Axel Pramann and Olaf Rienitz
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12:15 |
HL 74.2 |
Modulation Doping of Si using Al-induced Acceptor States in SiO2 — Dirk König, •Daniel Hiller, Sebastian Gutsch, Margit Zacharias, and Sean Smith
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12:30 |
HL 74.3 |
Investigation of 3C-SiC/SiO2 interfacial point defects from ab initio g-tensor calculations and electron paramagnetic resonance measurements — •T. A. Nugraha, M. Rohrmüller, U. Gerstmann, S. Greulich-Weber, A. Stellhorn, J. L. Cantin, J. Von Bardeleben, W. G. Schmidt, and S. Wippermann
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12:45 |
HL 74.4 |
Direct band gap and strain-related properties of germanium under high uniaxial stress — •Kevin Guilloy, Alban Gassenq, Nicolas Pauc, S. Tardif, F. Rieutord, Y.M. Niquet, J.M. Escalante, I. Duchemin, L. Milord, G. Osvaldo Dias, D. Rouchon, J. Widiez, J.M. Hartmann, J. Aubin, A. Chelnokov, R. Geiger, T. Zabel, E. Marin, H. Sigg, J. Faist, V. Reboud, and Vincent Calvo
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13:00 |
HL 74.5 |
Defect-induced magnetism in SiC probed by nuclear magnetic resonance — •Zhitao Zhang, Daryna Dmytriieva, Sebastian Molatta, J. Wosnitza, Yutian Wang, Manfred Helm, Shengqiang Zhou, and Hannes Kühne
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