Dresden 2017 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 75: Quantum Dots: Transport Properties II

HL 75.3: Talk

Thursday, March 23, 2017, 15:30–15:45, POT 151

Comparison of the carrier transfer properties between an electrolyte and GaInN- and GaNP-nanowires — •Jan Philipps¹, Sara Hölzel¹, Pascal Hille¹, Jörg Schörmann¹, Jan Stehr², Irina Buyanova², Charles Tu³, Detlev Hofmann¹, and Martin Eickhoff¹ — ¹I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Germany — ²Department of Physics, University of Linköping, Sweden — ³Department of Electrical and Computer Engineering, University of California, San Diego, USA

Ga_1−xIn_xN nanowires with In concentrations x of about 0.3 and GaP/GaN_xP_1−x core/shell nanowires (x ∼ 0.08) show interesting properties for the charge carrier transfer from the semiconductor into an electrolyte, which might be used for sensing applications or catalytic water splitting. The transfer can be initiated by visible light and depending on an applied bias electron- or hole-transfers are achieved. The processes can be monitored by photocurrent measurements or in more detail by electron paramagnetic resonance experiments using spin trapping agents. We find that the processes strongly affect the near bandgap emission in Ga_1−xIn_xN nanowires but have only minor effect on the emission of GaP/GaN_xP_1−x nanowires. The results will be discussed in the frame of the surface band bending model of the semiconductor/electrolyte interface.