Dresden 2017 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 79: Poster: New Materials
HL 79.15: Poster
Thursday, March 23, 2017, 15:00–19:00, P2-OG3
Band Offset in (Ga,In)As/GaAs/Ga(As,Sb) heterostructures — Sebastian Gies1, •Benjamin Holz1, Maria Weseloh1, Christian Fuchs1, Wolfgang Stolz1, Jörg Hader2,3, Jerome Moloney2,3, Stephan Koch1, and Wolfram Heimbrodt1 — 1Department of Physics and Materials Science Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany — 2Nonlinear Control Strategies Inc., 7040 Montecatina Dr., Tucson, AZ 85704, USA — 3College of Optical Sciences, University of Arizona, Tucson, AZ 85721, USA
The (Ga,In)As/GaAs/Ga(As,Sb) material system is used for lasers operating over a wide spectral range in the infrared. To further optimize the design of such heterostructures, it is important to have exact knowledge of the band structure and the band offsets, in particular. Here, we present a thorough analysis of the optical properties of (Ga,In)As/Ga(As,Sb) type-II heterostructures by means of temperature- and power-dependent photoluminescence spectroscopy. In conjunction with a microscopic many-body theory we are able to determine the band offset between Ga(As,Sb) and GaAs with high precision. Furthermore, we reveal the temperature dependent band-alignment in these heterostructures. Additionally, we introduce a GaAs interlayer of variable thickness to influence the tunnel processes of the charge carriers. Here, the great importance of these tunneling processes on the optical spectra and the influence of the internal interfaces are investigated.