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HL: Fachverband Halbleiterphysik

HL 79: Poster: New Materials

HL 79.22: Poster

Donnerstag, 23. März 2017, 15:00–19:00, P2-OG3

Anneal induced transforms of radiation defects in heavily irradiated Si detectors — •Dovile Meskauskaite, Tomas Ceponis, Eugenijus Gaubas, Vytautas Rumbauskas, and Juozas Vaitkus — Vilnius University Institute of Applied Research, Vilnius, Lithuania

In this research, transforms of the radiation defect induced by anneals have been studied in heavily irradiated Si. The n-type and p-type CZ and FZ Si material samples and detector structures, irradiated by high energy electrons (6.6 MeV), protons (26 GeV/c) and pions (300 MeV/c) using fluences up to 5×10¹⁶ cm⁻², have been studied. The deep level spectra have been examined by combining the capacitance and current deep level transient spectroscopy (DLTS) and using the optical injection techniques. The DLTS spectroscopy means has been combined with measurements of the temperature dependent carrier trapping lifetime (TDTL). The latter TDTL technique is a contact-less spectroscopy tool based on recording of the microwave-probed photoconductivity transients. This TDTL technique is preferential when radiation trap density approaches or exceeds the dopant concentration and when necessary to avoid modification of a detector structure due to anneals at elevated temperatures. A good agreement between the DLTS and TDTL spectra has been obtained. The dominant radiation defects and their transform paths under isochronal anneals have been revealed.