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HL: Fachverband Halbleiterphysik

HL 79: Poster: New Materials

HL 79.32: Poster

Donnerstag, 23. März 2017, 15:00–19:00, P2-OG3

Determining the band offset of Ga(NAsP)/GaP heterostructures on Si — Sebastian Gies, •Sarah Karrenberg, Wolfgang Stolz, and Wolfram Heimbrodt — Department of Physics and Materials Science Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany

The quaternary direct band-gap semiconductor Ga(N,As,P) is a promising candidate for optoelectronic integration on silicon. It can be grown lattice matched to Si and first lasing operation has been demonstrated. To optimize the laser design, it is necessary to have exact knowledge about the electronic structure of the material, especially the band-offset. In this study, we present a thorough investigation of photoluminescence properties of Ga(N,As,P)/Si heterostructures. Using temperature dependent PL we will reveal the disorder of the material and determine optizimed growth parameters. Furthermore, the conjunction of PL excitation spectroscopy and a QW model allows us to reveal the nature of the underlying transitions. In addition, we are able to determine the hitherto unknown band offset between Ga(N,As,P) and GaP with very high precision.