Dresden 2017 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 8: Photovoltaics

HL 8.6: Vortrag

Montag, 20. März 2017, 11:00–11:15, POT 251

Preparation and Analysis of In₂S₃:V Intermediate Band Thin-Film Absorbers for Solar Cells — •Leonard Wägele¹, Tanja Jawinski^1,2, Christoph Bahret¹, Holger von Wenckstern², Marius Grundmann², and Roland Scheer¹ — ¹Institute of Physics, Martin-Luther-University Halle-Wittenberg, 06120 Halle, Germany — ²Institute of Experimental Physics II, University of Leipzig, 04103 Leipzig, Germany

To achieve higher energy conversion efficiencies above the Shockley-Queisser limit, one can use larger band gap materials provided with an intermediate band. This allows the absorption of low energy photons via the intermediate band, while high energy photons can generate charge carriers with reduced thermalization losses. One theoretically suitable material for such a device is In₂S₃ combined with transition metals. We grow thin-film In₂S₃:V with physical co-evaporation from the elements. We use SEM, EDX, XRD and Raman spectroscopy to study the structural changes of vanadium variations. We show that vanadium is successfully incorporated into the In₂S₃ structure. Furthermore, UV-VIS-NIR spectroscopy, photoluminescence and photoconductivity are used to study the electro-optical properties of the material. We find that the absorption increases slightly with incorporated vanadium, while the below band gap photoluminescence decreases. Additionally, we show results from In₂S₃:V p-i-n solar cells utilizing both SnO:F and ZnO:Al as n-TCOs and ZnCo2O4 and NiO as p-TCOs. EQE and JV-measurements reveal the formation of functioning solar cells with so far low short circuit currents.