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HL: Fachverband Halbleiterphysik
HL 82: Quantum Information Systems
HL 82.6: Talk
Friday, March 24, 2017, 11:00–11:15, POT 81
3-axis magnetometer utilizing silicon vacancy defect spins in 4H silicon carbide — •Matthias Niethammer1, Matthias Widmann1, Sang-Yun Lee1,4, Pontus Stenberg2, Olof Kordina2, Takeshi Ohshima3, Nguyen Tien-Son2, Erik Janzén2, and Jöerg Wrachtrup1 — 13rd Institute of Physics, University of Stuttgart, IQST and Research Center SCoPE — 2Department of Physics, Chemistry and Biology, Linköping University — 3National Institutes for Quantum and Radiological Science and Technology, Takasaki — 4Korea Institute of Science and Technology, Seoul
Due to their inherent nature spins are very sensitive to magnetic fields. The Zeeman effect can thus be used to sense magnetic fields. Solid state systems as silicon carbide (SiC) can host defects with high spin states, which can be optically detected such as the silicon vacancy (VSi) in 4H-SiC down to the single level at room temperature [1]. In our previous work we showed that the C3V symmetry of this system together with the spin state of S=3/2 allows extraction of the magnetic field strength and polar angle [2,3]. Here we demonstrate that an analytical solution in combination with pulsed spin manipulation techniques can be used to measure the complete magnetic field vector even in a large dynamic range [4]. Combined with electrical readout such approaches can lead to highly sensitive and integrated quantum vector magnetometers [5].
1. Widmann et al, Nat. Mater 14(2), 164-168 (2014) 2. Simin et al, Phys Rev Appl 4(1), 014009 (2015) 3. Lee et al, Phys Rev B 92(11), 115201 (2015) 4. Niethammer et al, Phys Rev Appl 6(3), 034001 (2016) 5. Cochrane et al, Sci. Rep. 6, 37077 (2016)