Dresden 2017 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 84: Heterostructures and Interfaces

HL 84.2: Talk

Friday, March 24, 2017, 09:45–10:00, POT 151

Investigation of the growth of the organic semiconductor F4-TCNQ on inorganic substrates — •Hannah Schamoni, Michael Haugeneder, Martin Hetzl, Oliver Bienek, and Martin Stutzmann — Walter Schottky Institut und Physik-Department, Technische Universität München, Deutschland

The combination of organic and inorganic semiconductors is one promising approach towards new materials for applications like solar cells and light emitting devices, as they open up the possibility to benefit from the advantages of both material types. In order to identify the most promising hybrid systems, a detailed understanding of the properties of the organic/inorganic interface is essential. In this work, we focus on the growth of the small-molecule organic semiconductor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) by organic molecular beam deposition on various inorganic substrates like Si, diamond, graphene on Si or GaN nanowire arrays. We are able to confirm a Stranski-Krastanov growth mode of the organic layer on most substrates by means of AFM, REM and XPS measurements. The size, shape and density of the molecular clusters depend on the inorganic material, which we attribute to the differences in binding energy between F4-TCNQ and the various substrates. Furthermore, our data reveal monotonic dependencies of the density of the F4-TCNQ clusters on the diameter of the GaN nanowires and the spacing in between the nanowires, respectively.