Dresden 2017 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 84: Heterostructures and Interfaces

HL 84.3: Talk

Friday, March 24, 2017, 10:00–10:15, POT 151

A band-offset study on NiO/SnO₂ heterojunctions using X-ray photoelectron spectroscopy (XPS) — •Fabian Michel, Benedikt Kramm, Martin Becker, Robert Hamann, Angelika Polity, Detlev M. Hofmann, and Martin Eickhoff — Justus-Liebig Universität, Gießen, Deutschland

The band discontinuities of NiO/SnO₂ pn-heterojunctions were evaluated by X-ray photoelectron spectroscopy. The heterojunctions were produced by ion beam sputtering. Using the common method of E.A. Kraut and J.R. Waldrop considering the position of the different core level signals and especially the related energy difference in the vicinity of the heterointerface the valence band and conduction band discontinuities of NiO/SnO₂ were investigated. For that the band gaps of the fabricated heterojunctions were determined via UV-VIS spectroscopy. A qualitative analysis of the interfacial chemical state by estimating the modified Auger parameter and the relative concentrations of the photoelectron signals using depth profiling via in situ Ar⁺ ion etching was done. We also investigated the challenging Ni 2p signal by decomposing the line structure and the satellite structure. Results will be discussed with respect to other metal oxide heterojunctions such as NiO/ZnO, NiO/TiO and more.