Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 84: Heterostructures and Interfaces
HL 84.4: Vortrag
Freitag, 24. März 2017, 10:15–10:30, POT 151
NiSi2-Si interfaces as building blocks for reconfigurable field-effect transistors: from the atomic structure to device characteristics — •Florian Fuchs1,2,3, Jörg Schuster2,4, and Sibylle Gemming1,2,3 — 1Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden, Germany — 2Center for Advancing Electronics Dresden (cfaed), Dresden, Germany — 3Institute of Physics, Technische Universität Chemnitz, Chemnitz, Germany — 4Fraunhofer Institute for Electronic Nano Systems (ENAS), Chemnitz, Germany
The electron transport across metal-semiconductor interfaces is crucial for the functionality of reconfigurable field-effect transistors, which can be switched between electron and hole current. Devices were already fabricated experimentally, however, a profound understanding of the underlaying mechanism is not yet available.
This study focuses on the NiSi2-Si interface, which is studied using the NEGF formalism. Based on the calculated transmission spectra, the transfer characteristic of a reconfigurable transistor is obtained using a simplified approach. Even though this model strongly simplifies the electrostatic environment in a transistor, very good agreement with experimental devices is demonstrated. The impact of strain on the device characteristic is studied as well. It is shown that the magnitude of electron and hole current can be altered successfully. They can also be tuned to be symmetric, which fits to experimental observations. Finally, new insight into the device functionality is gained based on our calculations of the work functions and effective masses of the isolated NiSi2 and Si.