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HL: Fachverband Halbleiterphysik

HL 84: Heterostructures and Interfaces

HL 84.6: Vortrag

Freitag, 24. März 2017, 10:45–11:00, POT 151

Charge Transport in Hexathiophene - Silicon Hybrid Systems — •Felix Eckmann, Hannah Schamoni, and Martin Stutzmann — Walter Schottky Institut und Physik Department, Technische Universität München, München, Deutschland

Hybrid structures containing organic and inorganic semiconductors are attractive material systems for applications such as light emitting devices and solar cells due to their potential of combining the high mobility and stability of inorganic semiconductors with the organic semiconductors' low production cost and flexibility. In order to gain insight into the fundamental electronic properties of such structures' interfaces, a model system containing a hexathiophene thin film deposited by organic molecular beam deposition onto variously doped silicon substrates has been chosen for thorough investigation. Current - voltage as well as capacitance - voltage measurements have been performed in order to compare different contacting methods to the thin film, such as Au lift-off float-on and Hg-droplet contacts. Our data yields good agreement to space charge limiting current theory, showing strong diode characteristics with rectification ratios of up to four orders of magnitude, a switch in forward direction as well as significantly varying barrier heights from n- to p-type substrates.