Dresden 2017 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 86: New Materials

HL 86.4: Talk

Friday, March 24, 2017, 10:15–10:30, POT 112

Characterization of electrochemically deposited MoS_x layers for thin film transistors — •Talha Nisar, Torsten Balster, Jonas Köhling, and Veit Wagner — Department of Physics and Earth Sciences, Jacobs University Bremen gGmbH, Campus Ring 1, 28759 Bremen, Germany

Molybdenum disulfide is a promising material for future electronics. MoS₂ thin layers can be deposited by several deposition methods. The current state of the art for large area deposition of thin layers is chemical vapor deposition.
In our study we used electrochemical deposition to grow large area thin films of MoS_x (x=2-3) onto a Au-substrate. Ammonium tetrathiomolydate (ATTM) has been used as precursor material in the cathodic regime (-0.35V) with respect to Ag/AgCl reference electrode. The obtained layers from aqueous electrolyte are amorphous MoS₃/MoO₃ as could be confirmed from Raman and XPS measurements. It is shown, that the use of organic solvents allow oxygen contamination to be significantly reduced. The characterization of obtained layers by XPS shows an almost ideal Mo:S ratio of 1:2.1. Furthermore, these layer are characterized by Raman, AFM and SEM measurements. Annealed layers are transferred to SiO₂/Si wafers to fabricate thin film transistors in top contact bottom gate geometry.