Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 86: New Materials
HL 86.9: Vortrag
Freitag, 24. März 2017, 12:00–12:15, POT 112
Hyperdoping silicon with tellurium by ion implantation and ultra-short annealing for optoelectronics — •Mao Wang1,2, Fang Liu1,2, Ye Yuan1,2, Slawomir Prucnal1, Berencen Yonder1, Rebohle Lars1, Wolfgang Skorupa1, Manfred Helm1,2, and Shengqiang Zhou1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research — 2Technische Universität Dresden
Hyperdoping silicon with chalcogen atoms is a topic of increasing interest due to the strong sub-band gap absorption exhibited by the resulting materials, which can be exploited to develop infrared photodectectors and intermediate band solar cells [1-3]. In our work, tellurium-hyperdoped silicon layers have been fabricated by ion implantation followed by flash lamp annealing (FLA) or pulsed-laser melting (PLM). The Rutherford backscattering spectrometry / Channeling (RBS/C) results reveal the high-quality recrystallization of tellurium implanted silicon by both FLA and PLM. From the transport measurements, an insulator-to-metal transition is observed with increasing tellurium concentration. Moreover, the ellipsometry measurements show that the band gap narrows with increasing doping concentration. And the Fourier transform infrared (FTIR) spectroscopy show that tellurium hyperdoped Si has strong infrared absorption. All these results give us a signal that hyperdoped silicon with tellurium could enable silicon-based optoelectronics in the infrared band. [1] Kim, T. G., et al., Appl. Phys. Lett. 88, 241902 (2006) [2] Tabbal, M., et al., Appl. Phys. A 98, 589*594 (2010) [3] Umezu, I., et al., J. Appl. Phys. 113, 213501 (2013)