Dresden 2017 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 9: Quantum Dots: Preparation and Characterization

HL 9.4: Talk

Monday, March 20, 2017, 10:15–10:30, POT 112

Electrical characterization of sub-20 nm silicon nanowires fabricated using electron beam lithography and inductively coupled plasma etching — •Muhammad Bilal Khan, Dipjyoti Deb, Yordan M. Georgiev, and Artur Erbe — Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany.

Scaling down of CMOS faces strong challenges due to which new materials, enhanced functionality and new device concepts have gained importance. These concepts include undoped silicon nanowire based reconfigurable devices, which can be programmed as p-FET or n-FET by controlling the electrostatic potential applied via gate electrodes. In this work, electrical characterization of undoped sub-20 silicon nanowires (SiNWs) is reported. SiNWs are fabricated on intrinsic silicon-on-insulator (SOI) substrates in <110> and <100> crystal directions by a top down approach. Hydrogen silsesquioxane (HSQ), a negative tone electron beam resist, is used for nano- patterning and as a hard mask for etching. Nanowire etching process is optimized using an inductively coupled plasma (ICP) source and C₄F₈/SF₆/O₂ mixed gas recipe at 18 ^oC. These NWs are oxidized to form a SiO₂ shell and subsequently silicidized. For silicidation, the SiO₂ shell is wet etched at pre-defined positions followed by Nickel (Ni) sputtering and diffusion which yield silicide-silicon (Schottky) junctions. Ni is used for silicidation to selectively control the charge carriers injection at the junctions. Different silicidation progress and charge carrier transport was observed in <110> and <100> crystal directions.