Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 9: Quantum Dots: Preparation and Characterization
HL 9.5: Vortrag
Montag, 20. März 2017, 10:30–10:45, POT 112
Monolithical integration of III-V Quantum Dots into Silicon towards a new silicon based material platform for optoelectronics — •Marc Sebastian Wolf and Johann Peter Reithmaier — Technische Physik, Institute of Nanostructure Technologies and Analytics (INA), CINSaT, University of Kassel
Beyond the successful integration of III-V light emitting material on silicon by wafer-bonding or direct planar growth by using thick relaxation layers, no approach yet is fully process compatible with silicon fabrication technologies. To avoid III-V processing, a new hybrid material based on III-V quantum dots (QDs) embedded in a silicon matrix is under investigation (Benyoucef et al., pss a 211, 817 (2014). A key parameter is the development of core-shell QDs directly grown on silicon surfaces, which could be already successfully demonstrated at low-density structures (Benyoucef et al., APL 102, 132101 (2013)). In this work, the III-V quantum dots are grown in a solid source molecular beam epitaxy system directly on the silicon substrate and subsequently capped with Silicon. The growth and characterisation of InAs/GaAs quantum dots with densities of > 1010cm−2 on the silicon surface will be discussed. Additionally, photocurrent measurements of InAs nanocluster monolithically embedded in a silicon p-i-n diode will be shown.