Dresden 2017 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 90: Inhomogeneous Materials for Solar Cells

HL 90.2: Talk

Friday, March 24, 2017, 11:45–12:00, POT 81

Formation process of the CIGSe absorber layers in a sequential process — •Sven Schönherr, Philipp Schöppe, Michael Oertel, Udo Reislöhner, and Carsten Ronning — Institut für Festkörperphysik, Friedrich Schiller Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany

Cu(In,Ga)Se₂ (CIGSe) solar cells processed in a sequential process lead to high efficiencies of light conversion. However, the formation of the CIGSe absorber layer in such a process is still not completely clarified. In our process, the metallic precursor on top of a molybdenum back contact was reactively annealed in two steps in a selenium vapour atmosphere where it is typically converted to a CIGSe absorber layer. For a better understanding of the CIGSe formation process we varied the substrate temperature in the first step and aborted the selenization prematurely. X-ray diffraction measurements at the partly selenized layers were taken to indicate binary and chalcopyrite phases. For a detailed characterization, 200 nm thick lamellas were prepared with a focused ion beam. The thin cross sections lead to a high spatial resolution which is mainly limited by the diameter of the electron beam. Energy dispersive X-ray spectroscopy measurements were taken to measure the local element composition. Additionally, cathodoluminescence measurements at the lamellas were used to locate CIGSe chalcopyrite phases and to show where these phases arise during the selenization.