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KR: Fachgruppe Kristallographie

KR 1: Various Topics I (with DF)

KR 1.7: Vortrag

Montag, 20. März 2017, 11:50–12:10, GER 37

The pyroelectric coefficient of free standing GaN grown by HVPE — •Sven Jachalke¹, Patrick Hofmann², Gunnar Leibiger³, Frank S. Habel⁴, Erik Mehner¹, Tilmann Leisegang^1,4, Dirk C. Meyer¹, and Thomas Mikolajick^2,5 — ¹Institute for Experimental Physics, TU Bergakademie Freiberg, Leipziger Str. 23, 09599 Freiberg, Germany — ²NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden, Germany — ³Freiberger Compound Materials GmbH, Am-Junger-Löwe-Schacht 5, 09599 Freiberg, Germany — ⁴Samara National Research University, Moskovskoye Shosse 34, Samara 443086, Russia — ⁵Institute for Semiconductors and Microsystems, TU Dresden, Nöthnitzer Str. 64, 01187 Dresden, Germany

Here, we present the first temperature dependent measurements of the pyroelectric coefficient of free standing, and strain free GaN grown by hydride vapour phase epitaxy (HVPE). The Sharp-Garn method is applied to extract the pyroelectric coefficient from the electrical current response of the crystals subjected to a sinusoidal temperature excitation in a range of 0°C to 160°C. To avoid compensation of the pyroelectric response by an internal conductivity, insulating GaN crystals were used by applying carbon, manganese and iron doping during HVPE growth. Different pyroelectric coefficients observed at room temperature due to the doping correlate well with the change of the lattice parameter c. The obtained data is compared to previously published theoretical and experimental values of thin film GaN and discussed in terms of a strained lattice.