Dresden 2017 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 49: Surface Magnetism 2 (Joint Session with O)
MA 49.10: Vortrag
Donnerstag, 23. März 2017, 12:00–12:15, HSZ 401
Purely Antiferromagnetic Magnetoelectric RAM — •Tobias Kosub1, Martin Kopte1, Patrick Appel2, Brendan Shields2, Patrick Maletinsky2, René Hübner1, Jürgen Fassbender1, Oliver G. Schmidt3, and Denys Makarov1 — 1Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden, Germany — 2University of Basel, Basel, Switzerland — 3IFW Dresden e.V., Dresden, Germany
Magnetic RAM schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency [1]. We propose and demonstrate [2] a purely antiferromagnetic magnetoelectric RAM (AF-MERAM) that offers a remarkable 50-fold reduction of the writing threshold compared to ferromagnet-based counterparts and is robust in magnetic fields.
Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable operation at room temperature. The antiferromagnetic state is written via gate voltage pulses and is read out all-electrically via Zero-Offset Hall [3]. Based on our prototypes of these novel AF-MERAM elements, we construct a comprehensive model of the magnetoelectric selection mechanism in thin films of magnetoelectric antiferromagnets. We identify that growth induced effects lead to emergent ferrimagnetism, which is detrimental to the robustness of the storage. After pinpointing lattice misfit as the likely origin, we provide routes to enhance or mitigate this emergent ferrimagnetism as desired.
[1] F. Matsukura et al., Nature Nano. 10 209 (2015).
[2] T. Kosub et al., Nature Commun. accepted (2016).
[3] T. Kosub et al., Phys. Rev. Lett. 115 097201 (2015).