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MA: Fachverband Magnetismus

MA 64: Poster 1

MA 64.9: Poster

Freitag, 24. März 2017, 09:30–13:00, P2-EG

GMR films with crossed anisotropies for perpendicular field measurements — •Fabian Ganss^1,3, Wolfgang Raberg², Sebastian Luber², Sri Sai Phani Kanth Arekapudi³, Olav Hellwig^3,4, and Manfred Albrecht¹ — ¹Institute of Physics, Augsburg University, Augsburg — ²Infineon Technologies AG, Neubiberg — ³Institute of Physics, Chemnitz University of Technology, Chemnitz — ⁴Institute for Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden

As 3-dimensional field sensors require one part being susceptible to perpendicular fields, thin film GMR stacks with a linear and reversible response to such fields are of interest for the development of monolithic sensor devices. Stacks with such a behavior can be achieved by combining a pinning layer with perpendicular easy axis and a free layer with perpendicular hard axis. Furthermore, the stray field of the pinning layer can be minimized and its coercivity enhanced if a ferrimagnet (or antiferromagnet) is used. For the present study, Tb_xCo_100−x alloys have been chosen as the pinning layer material and Ni₈₁Fe₁₉ for the free layer. The single layers have been characterized by SQUID-VSM measurements, the complete layer stack by magneto-resistance measurements. Initial films confirm the expected behavior and exhibit a change in resistivity of 5% in a field range of 10 kOe. Further films will be optimized regarding their magnetic and electric properties. They shall be micro-structured then and equipped with bottom contacts through the substrate.