Dresden 2017 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 65: Poster 2

MA 65.24: Poster

Freitag, 24. März 2017, 09:30–13:00, P2-OG1

Doping of perpendicularly magnetized ferrimagnetic Mn₃Ge thin films — •Jan Balluff, Markus Meinert, and Günter Reiss — Center for Spinelectronic Materials and Devices, Physics Department, Bielefeld University, Germany

The Mn₃Ge compound[1] is interesting for spintronic applications in several ways. It combines a low saturation magnetization of 1µ_B per unit cell with a high coercivity of more than 2T. Furthermore, it shows perpendicular anisotropy, which is preferable, e.g, for spin transfer torque switching in magnetic tunnel junctions. We report on a study of doping the compound to improve the magnetic properties. Using density functional theory we calculate defect formation energies for Mn_3−xY_xGe, where Y are different dopants occupying either one of the two inequivalent Mn sites. In the case of Y=Ni, a reduction in the saturation magnetization is predicted.We prepared epitaxial thin films of Ni-doped Mn₃Ge on SrTiO₃ substrates using magnetron co-sputtering for different Ni concentrations. Magnetization measurements using a vibrating sample magnetometer reveal the predicted reduction in the magnetization for low Ni concentrations x ≈ 0.2.

[1] H.Kurt et al., Appl. Phys. Lett. 101, 132410 (2012)