Dresden 2017 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
MA: Fachverband Magnetismus
MA 66: Poster 3
MA 66.11: Poster
Friday, March 24, 2017, 09:30–13:00, P2-OG2
Tunnel Junction Fabrication for Tunneling Anisotropic Magnetoresistance Spectroscopy — •Michaela Schleuder1,3, Matthias Althammer1,3, Matthias Pernpeintner1, Hans Huebl1,3,4, Daniel Meier2, Günter Reiss2, and Rudolf Gross1,3,4 — 1Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Garching, Germany — 2Universität Bielefeld, Bielefeld, Germany — 3Physik-Department, Technische Universität München, Garching, Germany — 4Nanosystems Initiative Munich (NIM), Munich, Germany
Magnetic tunnel junctions (MTJs) consisting of one ferromagnetic metal electrode, an insulating barrier, and a normal metal counter electrode exhibit the so-called tunneling anisotropic magnetoresistance. Due to spin-orbit interaction, the resistance of the MTJ depends on the relative orientation of the magnetization with respect to the crystallographic axes of the ferromagnet. We discuss the fabrication strategies for MTJs based on the Heusler alloys Co2FeAl and Co2FeSi using MgO as the insulating barrier and Pt or Au as the counter electrode. The fabrication consists of a three-step electron lithography process, including subsequent Ar-ion etching and SiO2 sputter deposition. We present optical micrographs and atomic force microscopy images of the optimized fabrication steps with junction sizes down to the nm regime, confirming the successful fabrication of MTJs.
We show first results on the electrical characterization of these MTJs. This optimized fabrication scheme paves the way for more complex device patterns.