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MA: Fachverband Magnetismus
MA 66: Poster 3
MA 66.26: Poster
Friday, March 24, 2017, 09:30–13:00, P2-OG2
Temperature dependence of Current-Induced-Domain-Wall-Motion — •Tianping Ma1, Robin Bläsing1, Chirag Garg1,2, Tom Lichtenberg1, See-Hun Yang2, and Stuart Parkin1,2 — 1Max Planck Institute for Microstructure Physics, Halle (Saale), D06120, Germany — 2IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA
Racetrack memory, which uses current to control the motion of magnetic domain walls, is one of the most promising next generation memory devices. Using a combination of four spin-orbit-coupling derived phenomena, namely, perpendicular magnetic anisotropy (PMA), the Spin Hall Effect (SHE), the Dzyaloshinskii-Moriya exchange Interaction(DMI) and a synthetic antiferromagnetic (SAF) structure, Current-Induced-Domain-Wall-Motion (CIDWM) velocities can reach more than ~1,000 m/s. However, temperature, as another important parameter which will influence the CIDWM behaviour, has not yet been deeply investigated. As temperature changes, many physical parameters will change and thereby influence the CIDWM. Moreover, temperature will likely greatly influence any pinning of the domain walls: thermal fluctuations will likely affect the CIDWM threshold current intensity. Here in this work, we have performed CIDWM measurements over a wide range of temperature (80K to 440K). We observe a pronounced temperature dependence of the domain-wall motion velocity, the threshold current intensity and the SHE induced spin current injection efficiency. These measurements help us to gain a better understanding of the physics behind CIDWM.