Dresden 2017 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
MA: Fachverband Magnetismus
MA 67: Poster 4
MA 67.14: Poster
Friday, March 24, 2017, 09:30–13:00, P2-OG3
Spin Hall effect in topological crystalline insulators Pb1-xSnxTe — •Jue Huang1, Kai Chang1,2, and Stuart Parkin1 — 1Max Planck Institute of Microstructure Physics, 06120 Halle, Germany — 2Department of Physics, Tsinghua University, 100084 Beijing, China
The development of spintronics devices currently drives much interest for the widespread applications in memory and logic devices. Therefore, it requires to search materials which can provide more efficient magnetization manipulation. Besides heavy-metal/ferromagnet bilayer materials, topological insulator bismuth selenide (Bi2Se3) is also reported to have large spin torque ratio [1]. We propose that the topological crystalline insulators (TCI) Pb1-xSnxTe, in which the surface exhibits even number of Dirac cone states and topologically protected by crystal symmetry, are potential candidates for spintronics technology. By growing (001) and (111) Pb1-xSnxTe thin films with molecular beam epitaxy (MBE) and measuring spin torque ferromagnetic resonance (ST-FMR) of these thin films, we study the spin Hall effect.
[1] Mellnik A. R., Lee J. S., et al., Nature 511, 449-451, 2014.