Dresden 2017 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 68: Poster 5

MA 68.20: Poster

Freitag, 24. März 2017, 09:30–13:00, P2-OG4

XMCD and RXR study of the magnetic and electronic properties of Vanadium-doped TIs — •Abdul-Vakhab Tcakaev¹, Volodymyr Zabolotnyy¹, Michael Dettbarn¹, Benjamin Katter¹, Enrico Schierle², and Vladimir Hinkov¹ — ¹University Würzburg, Am Hubland, 97074 Würzburg — ²Helmholtz-Zentrum Berlin für Materialien und Energie, Albert Einstein-Str. 15, 12489 Berlin.

Bismuth and antimony tellurides, Bi₂Te₃ and Sb₂Te₃, and the alloys based on these materials play a significant role in thermoelectric technology. Recently these materials became most famous as topological insulators (TIs) with potential applications in spintronics.

Here we report on electronic and magnetic properties of vanadium-doped thin films (10 nm) of (Bi_1−xSb_x)₂Te₃ that were grown by molecular beam epitaxy on Si(111) substrates [1]. First-principle calculations predict that vanadium orders ferromagneticaly in Bi₂Te₃ at sufficiently high concentrations. Due to its non-destructive nature and element-specificity, Resonant X-Ray Reflectivity (RXR) in combination with x-ray magnetic circular dichroism (XMCD) is an optimal experimental tool to study magnetic and electronic properties of vanadium-doped TIs. XMCD sum rules allow to extract spin and orbital moments separately. The sum rules can be readily applied for the late 3d transition metals, but for the V complex structure of absorption edge complicates deconvolution of the individual L_2,3 contributions. To resolve this difficulty we supplement our experimental data with crystal field calculations. [1] S. Grauer et al., Phys. Rev. B 92, 201304(R), 2015.