Dresden 2017 – scientific programme

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MI: Fachverband Mikrosonden

MI 5: Session on Nanostructuring Beyond Conventional Lithography

MI 5.4: Talk

Wednesday, March 22, 2017, 12:30–12:45, MER 02

Nanopillar with self-assembled Si nanodot for single electron transistor — •Thomas Prüfer, Karl-Heinz Heinig, Wolfhard Möller, and Johannes von Borany — Helmholtz-Zentrum Dresden-Rossendorf, Dresden-Rossendorf, Deutschland

Conventional Lithography allows the fabrication of structures down to  10 nm, being still too large for single electron transistors (SET) operating at room temperature (RT), which requires a tiny quantum dot (<5nm) embedded in SiO2, with tunnel distances to the source and drain <2nm. Here, we predict a fully CMOS-compatible method of self-assembly of a single Si quantum dot. We assume that 10*20nm thin nanopillars of a layer stack c-Si/6nm SiO2/30nm a-Si are made by conventional lithography. We predict that such a single dot is self-organized and self-assembled between the top and bottom silicon layer by phase separation of metastable SiOx. The SiOx is made by collisional mixing in the layer stack, which is simulated by TRI3DYN [1]. The phase separation of SiOx is described by 3D kinetic lattice Monte Carlo simulations [2]. Our results predict that a single Si nanodot forms if the volume of SiOx is smaller than (10nm)³. This work has been funded by the European Union’s Horizon 2020 research and innovation program under grant agreement No 688072. [1] W. Möller; NIM B, 322, 23*33; [2] M. Strobel, K.H. Heinig, W. Möller, PRB 64, 245422