Dresden 2017 – wissenschaftliches Programm

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MM: Fachverband Metall- und Materialphysik

MM 34: Poster session II

MM 34.28: Poster

Dienstag, 21. März 2017, 18:30–20:30, P4

Tuning the amorphous phase of the Phase change materials GeSbTe225 and Sb2Te by altering the quenching-rate from the liquid phase — •Christoph Persch, Thorben Frahm, and Matthias Wuttig — 1.Physikalisches Institut IA, RWTH Aachen University, 52074 Aachen, Germany

Phase-change materials (PCMs) constitute a class of materials characterized by a pronounced difference in physical properties between the crystalline and the amorphous phase. The crystalline state usually features a low electric resistance and a high reflectivity while the amorphous state features a high electric resistance and a low reflectivity. As phase transitions are inherently fast, phase-change materials are of great interest for non-volatile memory applications, such as solid state PC-RAM. To investigate the switching behavior of phase-change materials, a measurement setup comprised of a pulse-probe laser system and a detection unit has been established. To deposit a sufficient amount of thermal energy in the PCM sample under investigation, the PCM layer is situated in a layer stack constituted of dielectric materials. This allows for a fine tuning of the heat flow into the substrate material upon heating and upon melt-quenching, so by altering the thickness of the dielectric layers, different quenching rates (q.r.) could be obtained. A significant change of the temperature-dependent crystal growth velocities in the amorphous phase of PCMs quenched at different rates has been observed. Thus, tuning the amorphous phase of PCMs by altering the q.r. has been demonstrated, rendering the q.r. another important factor to consider in the process of device-design.