Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 18: Semiconductor Substrates: Structure, Epitaxy and Growth

O 18.2: Vortrag

Montag, 20. März 2017, 16:15–16:30, WIL C307

Patterning of ultra sharp dopant profiles in silicon — Simon Cooil^1,2, Federico Mazzola¹, Hagen Klemm³, Gina Peschel³, Yuran Niu⁴, Alex Zhakarov⁴, Andrew Evans², Thomas Schmidt³, Michelle Simmons⁵, •Jill Miwa⁶, and Justin Wells¹ — ¹NTNU, Trondheim, Norway — ²Aberystwyth University, Aberystwyth, UK — ³Fritz Haber Institute, Berlin, Germany — ⁴MAX IV Laboratory, Lund, Sweden — ⁵UNSW, Sydney, Australia — ⁶Aarhus University, Aarhus, Denmark

We present a method for patterning a buried two-dimensional electron gas (2DEG) in silicon. The buried 2DEG forms from placing an ultra sharp and dense profile of phosphorus dopants beneath the silicon surface; a so-called Si:P δ-layer. The composition and structure of these Si:P δ-layers have been studied down to the atomic limit by secondary ion mass spectrometry and scanning tunnelling microscopy. Both angle resolved photoemission spectroscopy and theoretical calculations have shown that these Si:P δ-layers host a 2DEG with properties desirable for atomic scale quantum electronic devices. Here, we provide a new method for patterning such buried 2DEGs using low kinetic energy electron beam lithography. Using a combination of microscopic and spectroscopic techniques, we demonstrate the formation of patterned features with dopant concentrations sufficient to create 2DEG states.