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16:00 |
O 18.1 |
Deconstructing silicon: can surface reconstructions emerge from global geometry screening? — •Chiara Panosetti, Maximilian Bauer, Matt Probert, and Karsten Reuter
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16:15 |
O 18.2 |
Patterning of ultra sharp dopant profiles in silicon — Simon Cooil, Federico Mazzola, Hagen Klemm, Gina Peschel, Yuran Niu, Alex Zhakarov, Andrew Evans, Thomas Schmidt, Michelle Simmons, •Jill Miwa, and Justin Wells
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16:30 |
O 18.3 |
Surface Structure of MOVPE-prepared GaP(111)B — •Peter Kleinschmidt, Pingo Mutombo, Oleksandr Romanyuk, Marcel Himmerlich, Theresa Berthold, Xin Wen, Andreas Nägelein, Matthias Steidl, Agnieszka Paszuk, Oliver Supplie, Stefan Krischok, and Thomas Hannappel
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16:45 |
O 18.4 |
In situ surface control of AlP on GaP(100) substrate during processing in MOCVD ambient — •Manali Nandy, Agnieszka Paszuk, Anja Dobrich, Oliver Supplie, Peter Kleinschmidt, and Thomas Hannappel
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17:00 |
O 18.5 |
The structure of single-crystalline ZnO surfaces — •Jens Niederhausen, Antoni Franco-Cañellas, Simon Erker, Martin Oehzelt, Thorsten Schultz, Patrick Amsalem, Pardeep K. Thakur, Katharina Broch, David Duncan, Anton Zykov, Stefan Kowarik, Tien-Lin Lee, Alexander Gerlach, Oliver T. Hofmann, Frank Schreiber, and Norbert Koch
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17:15 |
O 18.6 |
Atomic scale STM and nc-AFM study of the Hematite (012) surface — •Zdenek Jakub, Florian Kraushofer, Magdalena Bichler, Jan Hulva, Martin Setvin, Michael Schmid, Ulrike Diebold, Peter Blaha, and Gareth. S. Parkinson
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