Dresden 2017 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 24: Semiconductor Substrates: Adsorption
O 24.1: Vortrag
Montag, 20. März 2017, 17:30–17:45, WIL C307
Conductivity of a two-dimensional hole gas on diamond — •Dennis Oing, Nicolas Wöhrl, Martin Geller, and Axel Lorke — Universität Duisburg-Essen
Diamond is a material with promising properties like robustness, high thermal conductivity and high electric breakdown field. Because of the large band gap of 5.45 eV, diamond shows a low intrinsic charge carrier density at room temperature.
However, a two-dimensional hole gas can be established on the surface by hydrogen termination and accumulation of an adsorbate layer.
We have produced a two-dimensional hole gas (2DHG) on chemical vapor deposition (CVD)-grown diamond through a hydrogen plasma treatment with varying parameters. This 2DHG is characterized using current-voltage (I-V) measurements and temperature-dependent Hall experiments. The Hall measurements reveal a p-type conductivity with a charge carrier density of 2· 1013 cm−2 and a mobility of 60 cm2V−1s−1 at room temperature. The temperature is varied in the range from 4.2 K up to 325 K, and we find a maximum of the mobility of 84 cm2V−1s−1 at 230 K.