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10:30 |
O 32.1 |
Hauptvortrag:
Electrical detection of spin-polarized transport on topological insulator via four-probe spectroscopy — •An-Ping Li, Saban Hus, Corentin Durand, Xiaoguang Zhang, Giang Nguyen, and Yong Chen
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11:00 |
O 32.2 |
Multi-tip STM analysis of freestanding GaAs-NWs in dependence on surface conditioning — •Andreas Nägelein, Matthias Steidl, Peter Kleinschmidt, and Thomas Hannappel
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11:15 |
O 32.3 |
Electrical resistance of individual defects at a topological insulator surface — •Felix Lüpke, Markus Eschbach, Tristan Heider, Martin Lanius, Peter Schüffelgen, Daniel Rosenbach, Nils von den Driesch, Vasily Cherepanov, Gregor Mussler, Lukasz Plucinski, Detlev Grützmacher, Claus M. Schneider, and Bert Voigtländer
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11:30 |
O 32.4 |
In-situ electro-migration studies on silver(Ag) contacts for nanogap fabrication — •Atasi Chatterjee, Ejvind Olsen, Frederik Edler, Torsten Heidenblut, Christoph Tegenkamp, and Herbert Pfnür
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11:45 |
O 32.5 |
Hauptvortrag:
Probing electron transport with atomic scale precision — •Christian A. Bobisch
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12:15 |
O 32.6 |
Oxygen adsorption induced tuning of transport in atomic gold chains on vicinal silicion — •Frederik Edler, Ilio Miccoli, Jan P. Stöckmann, Herbert Pfnür, Christian Braun, Simone Sanna, Wolf G. Schmidt, and Christoph Tegenkamp
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12:30 |
O 32.7 |
Interface Conductivity of Tellurium on Si(111) Investigated by in situ Charge Transport Measurements with a Multi-Tip STM — Felix Lüpke, •Sven Just, Martin Lanius, Gustav Bihlmayer, Jiri Dolezal, Martina Luysberg, Elmar Neumann, Vasily Cherepanov, Ivan Ostadal, Gregor Mussler, Detlev Grützmacher, and Bert Voigtländer
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12:45 |
O 32.8 |
Separating 2D and 3D resistivities using a modified 4-probe method — Snorre Kjeldby, Simon Cooil, and •Justin Wells
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