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O: Fachverband Oberflächenphysik

O 47: Electronic Structure of Surfaces: Magnetism and Spin Phenomena

O 47.1: Poster

Dienstag, 21. März 2017, 18:30–20:30, P1A

A silicon-based room temperature spin source without magnetic layers — •Debkumar Bhowmick, Matthias Kettner, Manfred Bartsch, and Helmut Zacharias — Physikalisches Institut, WWU Münster, Wilhelm-Klemm-Str. 10, 48149 Münster

Controlling the electron spin orientation and spin injection into functional electronic devices is of central importance in the field of spin transport electronics or spintronics. So far ferromagnetic metal/semiconductor junctions have been used to develop for spintronics which works only under low-temperature. Self-assemble chiral molecular monolayer (like dsDNA, Lysine) on gold shows promising in the direction of development of room temperature spintronic devices. In this present study, electron spin filtering by DNA on silicon, covalently bound by a 3-isothiocyanatopropyl triethoxy silane linker have been shown. This provides a means for developing room temperature spintronics. Electrons from silicon passing through double-stranded DNA acquire a longitudinal spin polarization. This enables the integration of helical molecules as spin filters in modern electronics for spin control, injection, and detection.