Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 48: Oxide and Insulator Surfaces: Structure, Epitaxy and Growth
O 48.6: Poster
Dienstag, 21. März 2017, 18:30–20:30, P1A
Single-crystalline growth of EuO on Cu (001) — •Tristan Heider1, Timm Gerber1, Patrick Lömker1, Claus Michael Schneider1,2, Lukasz Plucinski1,2, and Martina Müller1,2 — 1Peter Grünberg Institut (PGI-6), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany — 2Fakultät für Physik and CENIDE, Universität Duisburg-Essen, 47048 Duisburg, Germany
The ferromagnetic insulator EuO shows very high spin polarization exceeding 90% which makes this material a prototype candidate for research in the field of spintronics. We studied MBE growth of EuO on Cu(001), because Cu is both a very good electrical and thermal conductor. Thus, Cu is also ideally suited as a substrate for photoemission experiments at low temperatures. Since the magnetic properties of EuO are strongly influenced by strain [1] Cu is an ideal substrate because it allows for nearly strain-free heteroepitaxy of EuO films, with the orientation EuO(100)||Cu(110) .
We systematically studied the growth of EuO on Cu(001) by performing synthesis in (a) temperature and (b) oxygen pressure series. We could restrict the EuO synthesis to a very small parameter window, in which single-crystalline growth is mastered. The crystalline quality was confirmed in situ by RHEED and LEED, while the chemical composition was analyzed by in situ XPS. An additional Eu capping layer was found to be a good protection from overoxidization of the highly reactive EuO film during vacuum transfer to the ARPES chamber, where high resolution spin-ARPES measurements are performed.
Reference: [1] Ingle et al. Phys. Rev. B 77, 121202(R) (2008)