Dresden 2017 – scientific programme
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O: Fachverband Oberflächenphysik
O 55: Graphene
O 55.3: Poster
Tuesday, March 21, 2017, 18:30–20:30, P2-EG
Scanning tunneling microscopy and spectroscopy on graphene/h-BN/SiO2/Si devices — •Lena Stoppel, Fabian Paschke, Julia Tesch, Samuel Bouvron, Yuriy S. Dedkov, and Mikhail Fonin — Department of Physics, University of Konstanz, Germany
Exceptional transport properties of graphene, a two-dimensional honeycomb lattice of sp2-bonded carbon atoms, make it a promising material for applications in microelectronics and sensing.
Here, we present a systematic scanning tunneling microscopy (STM) study of graphene on h-BN/SiO2/Si substrates. We use wet chemical transfer of CVD-grown multilayer hexagonal boron nitride (h-BN) and CVD-grown monolayer graphene onto a silicon chip with a thin insulating silicon dioxide layer. The transfer method was optimized in a way that STM measurements reveal large surface areas of clean graphene, showing the honeycomb atomic lattice and a Moiré pattern due to the underlying h-BN. We also perform scanning tunneling spectroscopy measurements to investigate the electronic properties of graphene. In a similar procedure graphene was transferred onto metal dichalcogenides, and the electronic properties were investigated.