Dresden 2017 – scientific programme

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O: Fachverband Oberflächenphysik

O 55: Graphene

O 55.5: Poster

Tuesday, March 21, 2017, 18:30–20:30, P2-EG

Graphene growth on SiC(0001) without step bunching — •Jakob Lidzba, Martina Wanke, Florian Speck, and Thomas Seyller — Professur für Technische Physik, Institut für Physik, TU Chemnitz, Reichenhainer Straße 70, 09126 Chemnitz, Germany

Epitaxial growth of graphene on SiC(0001) is a well-established method for the production of high-quality graphene layers [1]. The growth process ist accompanied by a step bunching of the SiC and the concomitant formation of so-called macrosteps. Since the growth of graphene layers starts at the step edges, this prevents the formation of uniform graphene films. Therefore it is crucial to find a way of controlling their development. Kruskopf et al. stated, that the H-etch pretreatment is responsible for strong step bunching. However, the formation of high steps at the surface can be suppressed by separating the processes of buffer layer and graphene growth [2,3]. In this study we test different parameters for the growth process of monolayer graphene to avoid step bunching and therefore improve the growth process. Thickness of the graphene layers and chemical composition of the surface were determined from XPS spectra, while AFM was used to examine the topography of the sample surfaces.

[1] K.V. Emtsev et al., Nature Mater. 8, 203 (2009).

[2] M. Kruskopf et al., J. Phys.: Condens. Matter 27, 185303 (2015).

[3] M. Kruskopf et al., 2D Mater. 3, 041002 (2016).