Dresden 2017 – scientific programme

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O: Fachverband Oberflächenphysik

O 60: Solid-Liquid Interfaces: Structure, Spectroscopy, Reactions and Electrochemistry

O 60.6: Poster

Tuesday, March 21, 2017, 18:30–20:30, P2-OG2

Electrochemical etching of GaAs, InP and InSb after ion irradiation — •Alrik Stegmaier, Ulrich Vetter, and Hans Hofsäss — 2. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen

Microelectromechanical systems (MEMS) combine electrical and mechanical features on the micrometer scale and are used for an increasing number of applications, including energy harvesters, accelerometers and pressure sensors [1]. With Proton Beam writing (PBW) it is possible to produce these three dimensional MEMS structures by varying only the fluence of the proton irradiation on a III-V semiconductor sample, followed by electrochemical etching [2,3].

As such, the electrochemical etching of the sample is of large importance for producing high quality final structures. Here we extend the reported electrochemical models [4] to both InSb and the highly irradiated case, typically ecountered during PBW. With this, we can show significant improvements of both the etching time and quality over our previous findings [5].

[1] V. Cimalla et al., J. Phys. D: Appl. Phys., 40(20), 6386, 2007

[2] J.A. van Kan et al., Appl. Phys. Lett., 83(8), 1629, 2003

[3] P. Mistry et al., Nucl. Instr. Meth. Phys. Res. B, 237, 188, 2005

[4] P. Allongue et al., J. Electroanal. Chem., 317, 77-99, 1991

[5] M. Schulte-Borchers et al., J. Micromech. Microeng., 22, 025011, 2012