Dresden 2017 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 60: Solid-Liquid Interfaces: Structure, Spectroscopy, Reactions and Electrochemistry

O 60.7: Poster

Dienstag, 21. März 2017, 18:30–20:30, P2-OG2

In situ X-ray reflectivity studies of electrochemical Cu deposition on industrial Ru covered Si wafers — •Timo Fuchs, Jonathan Laufer, Finn Reikowski, Jochim Stettner, and Olaf Magnussen — Institut für Experimentelle und Angewandte Physik, Universität Kiel, Olshausenstr. 40, 24098 Kiel, Germany

Further decrease in size of Cu semiconductor interconnects is of special interest for the ongoing improvements in computing capacity. An interconnect consist of trenches and vias, which are typically coated with a Cu seed layer on top of a Ta/TaN diffusion barrier layer, that allows homoepitaxial growth of the electrochemically applied Cu. However, the fabrication of reliable devices on the base of Cu seed layers becomes increasingly difficult, when typical feature sizes are below 20 nanometers and the homogeneity and roughness of the layers become crucial. Consequently, current efforts focus on the development of substrates for seedless Cu electroplating, using ultrathin Ru adhesion layers of high conductivity on a TaN diffusion barrier.
For the successful control of structural properties of the Cu layer, an in-deep understanding of early Cu growth processes on an atomic level, i.e. nucleation and coalescence of Cu islands on Ru, is indispensable. We are presenting first structural data, gained by in situ X-ray reflectivity measurements at a lab source of the bare Ru/TaN/SiO2/Si substrate as well as in operando studies of the growing Cu layer. The results of this investigation will serve as a base for future grazing incidence small angle x-ray scattering (GISAXS) studies using synchrotron radiation.