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O: Fachverband Oberflächenphysik

O 73: Nanostructures at Surfaces: Metals, Oxides and Semiconductors III

O 73.10: Vortrag

Mittwoch, 22. März 2017, 12:45–13:00, REC/PHY C213

Formation of dendritic and point-like silicon-oxide clusters during Chemical Vapor Deposition growth of graphene on copper foils — •Umut Kamber, Cem Kincal, and Oğuzhan Gürlü — Istanbul Technical University, Istanbul, Turkey

Chemical Vapor Deposition (CVD) is a widely employed method to produce large area graphene on metal surfaces. It has been known since the first CVD growth of graphene on copper foils in a quartz tube that some droplet like silicon-oxide contaminants appear on the surfaces. Therefore, optimizing the CVD process for defect free graphene is one of the most intensely studied subtopic in graphene research. We performed systematic experiments by changing CVD conditions to control the shapes and sizes of silicon-oxide particles. We developed a methodology to generate different shapes and sizes of nano scale fractal structures on both graphene/Cu system as well as on bare Cu foils. Parameters most effective on the number of impurities and the formation of fractals were determined to be hydrogen flow during annealing, annealing time and the amount of methane dosing. Lateral Force Microscopy (LFM) measurements were performed in order to investigate whether these particles formed at the graphene/Cu interface or on the graphene layer.